| The MASc program provides students with an opportunity to pursue advanced study and research with the guidance of experts in their respective fields. Studying in a chosen area of specialty and developing skills through hands-on experience in the MSE world-class labs provides students with the ability to either pursue PhD studies or to move out into industry with enriched skills and knowledge. This full-time program demands commitment and passion for research in materials engineering. For those interested in continuing to PhD-level research, successful completion of the MASc is the normal route.
The MEng program has been developed for recent graduates who wish to pursue graduate-level studies but may not be interested in continuing to the PhD program. This program is also intended for working engineers who wish to augment their current knowledge and add to their credentials. The multidisciplinary nature of materials engineering and the coursework-only and coursework-plus-project options enable students to build personalized programs which best suit their individual interests and needs. The MSE MEng is recognized and respected by employers globally and can enhance and enrich the career opportunities of graduates.
|
| Grade for Entrance Previous Year (%)* | 78 |
| Test Scores: | - Test of English as a Foreign Language (Paper Based) [min. 580] or Test of English as a Foreign Language (Internet Based) [min. 93] or International English Language Testing System (academic or immigration) [min. 7]
|
| Additional Admission Requirements: | A minimum of B+ (78%+) in each of the last two (2) years of an undergraduate program from an accredited institution is required.
|
* The entrance grade may change from year to year. Please contact the school for further information.
* We make every attempt to provide accurate information on prerequisites, programs, and tuition. However, this information is subject to change without notice and we highly recommend that you contact the school to confirm important information before applying.